Wolfspeed / Cree GTVA High Power RF GaN on SiC HEMT
Wolfspeed / Cree GTVA High Power RF GaN on SiC HEMT are 50V High Electron Mobility Transistors (HEMT) based on Gallium-Nitride on Silicon Carbide technology. GaN on SiC devices offer high power density coupled with a high breakdown voltage, enabling highly efficient power amplifiers. The GTVA High Power RF GaN on SiC HEMT feature input matching, high efficiency, and thermally-enhanced packages. These Pulsed/CW (Continuous Wave) devices have a pulse width of 128µs and a duty cycle of 10%.
Features
GaN on SiC HEMT technologyInput matchedHuman Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001)Drain Operating Voltage (VDD): 50V
Applications
AvionicsDefence
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